4H-SiC Full Wafer Mapping Image of CMP-Finished Sub-Surface Damage by Laser Light Scattering

Developing an observation method for distributing sub-surface damage (SSD) on large-diameter 4H-SiC bulk wafers formed by mechanical processing can significantly improve the epitaxial and growth processes. This study used a novel laser light scattering (LLS) technique to observe SSD distribution 6-inch (0001) wafer. As result, intensity distributions similar grinding lap-polishing traces shape of jig hold wafer during polishing were observed CMP-finished SiC surface. Since surface topography area was flat microscopy observation, it is assumed that this SSD. result suggests LLS be inspection distribution. In addition, using has demonstrated possible scratches, particles, macrostep bunching. anticipated allow further optimization thermal etching process prior CVD growth.