A 261mV Bandgap reference based on Beta Multiplier with 64ppm/0C temp coefficient

In this paper, a low voltage bandgap reference circuit has been proposed. The introduction of modified beta multiplier bias decreased the mismatch caused by PMOS transistors opamp contribution. By shifting fixed resistors to NMOSs drain side, minimised threshold between two NMOS transistors. A 200-point MC simulation showed 0.9 mV standard deviation, with 0.34% accuracy. simulated temperature coefficient was 64 ppm/0C. proposed consumed 5.04 µW power from 0.45 V supply voltage. prototype implemented in 65 nm CMOS technology occupying 2888 µm2 silicon area, nominal value at 261 mV.