A 5.5/12.5?GHz concurrent dual?band power amplifier MMIC in 0.25 ?m GaAs technology

نویسندگان

چکیده

A concurrent 5.5/12.5-GHz dual-band power amplifier (PA) is designed and implemented in a 0.25 ?m GaAs pseudomorphic high electron mobility transistor process. The PA composed of two stages adopts LC parallel series networks for matching. efficiency the improved by lowering drain voltage driver stage. Measurement results show that proposed features maximum small-signal gain 17.1 15.6 dB, output 24.9 24.5 dBm, peak power-added (PAE) 35.5% 35% at 5.5 12.5 GHz, respectively. consumes total DC 73 mA, its consumption 503 mW. chip size 1.4 × 1.3 mm2 including all testing pads.

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ژورنال

عنوان ژورنال: Electronics Letters

سال: 2022

ISSN: ['0013-5194', '1350-911X']

DOI: https://doi.org/10.1049/ell2.12445