A Comparative Analysis of Pressure Sensing Parameters for Two Dimensional Photonic Crystal Sensors Based on Si and GaAs

A pressure sensor based on two dimensional photonic crystal structure is presented. The considered for sensing a lattice of air holes surrounded by semiconductor material. waveguide with central microcavity formed filling principle depends upon the shifting wavelength peak towards higher region when raised. proposed can work in range 0–5 GPa. Using this structure, semiconductors, Si and GaAs, have been taken analysis. It found that resonant more pronounced GaAs than Si. In dynamic GPa, sensitivity estimated as 1.674 nm/GPa while it 17.00 GaAs. quality factor figure merit (FOM) also to be sensor.