A Low Temperature Fully Lithographic Process For Metal–Oxide Field-Effect Transistors

A Low Temperature Fully Lithographic Process For Metal–Oxide Field-Effect Transistors

We report a low temperature C lithographic method for fabricating hybrid metal oxide/organic field-effect transistors (FETs) that combine a zinc–indium–oxide (ZIO) semiconductor channel and organic, parylene, dielectric layer. The transistors show a field-effect mobility of 12 0.8 cm V s , on/off ratio of 10 and turn-off voltage of V. This work demonstrates that organic and inorganic layers can...

A facile process to achieve hysteresis-free and fully stabilized graphene field-effect transistors.

The operation of chemical vapor-deposited (CVD) graphene field-effect transistors (GFETs) is highly sensitive to environmental factors such as the substrate, polymer residues, ambient condition, and other species adsorbed on the graphene surface due to their high defect density. As a result, CVD GFETs often exhibit a large hysteresis and time-dependent instability. These problems become a major...

Process Optimization of Deposition Conditions for Low Temperature Thin Film Insulators used in Thin Film Transistors Displays

Deposition process for thin insulator used in polysilicon gate dielectric of thin film transistors are optimized. Silane and N2O plasma are used to form SiO2 layers at temperatures below 150 ºC. The deposition conditions as well as system operating parameters such as pressure, temperature, gas flow ratios, total flow rate and plasma power are also studied and their effects are discussed.  The p...

New Flexible Channels for Room Temperature Tunneling Field Effect Transistors

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used a...

Bias-temperature instability in single-layer graphene field-effect transistors