A modified lightly doped drain structure for VLSI MOSFET's

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چکیده

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High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure

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ژورنال

عنوان ژورنال: IEEE Transactions on Electron Devices

سال: 1986

ISSN: 0018-9383

DOI: 10.1109/t-ed.1986.22739