A nanocomposite ultraviolet photodetector based on interfacial trap-controlled charge injection
نویسندگان
چکیده
منابع مشابه
A nanocomposite ultraviolet photodetector based on interfacial trap-controlled charge injection.
Ultraviolet photodetectors have applications in fields such as medicine, communications and defence, and are typically made from single-crystalline silicon, silicon carbide or gallium nitride p-n junction photodiodes. However, such inorganic photodetectors are unsuitable for certain applications because of their high cost and low responsivity (<0.2 A W(-1)). Solution-processed photodetectors ba...
متن کاملImproving the sensitivity of a near-infrared nanocomposite photodetector by enhancing trap induced hole injection
Improving the sensitivity of a near-infrared nanocomposite photodetector by enhancing trap induced hole injection" (2015).
متن کاملFabrication of Ultraviolet Photodetector Based on ZnO Nanostructures and Calcium Impurities Using Sol-Gel Method
In this paper an ultraviolet (UV) photodetector has been fabricated using ZnO nanostructures. The cheap fabrication process, high-quality nanostructures and the desired results for the photodetector are the most important characteristics of the proposed method. ZnO nanostructures have been grown using sol-gel method. In order to increase the sensitivity, calcium impurities have been added to na...
متن کاملVisible-blind, ultraviolet-sensitive photodetector based on SrTiO3 single crystal.
High-sensitivity and visible-blind ultraviolet (UV) photoconductive detectors based on SrTiO(3) single crystal with interdigitated electrodes are reported. The responsivities of photovoltage and photocurrent can reach 2.13x10(5) V/W and 213 mA/W, respectively, at 330 nm at ambient temperature, and the corresponding quantum efficiency eta reaches 80.2%. The dark current is lower than 50 pA at 10...
متن کاملMetal-semiconductor-metal ultraviolet photodetector based on GaN
A metal-semiconductor-metal (MSM) ultraviolet photodetector has been fabricated using unintentionally doped n-GaN films grown on sapphire substrates. Its dark current, photocurrent under the illumination with λ = 360 nm light, responsivity, and the dependence of responsivity on bias voltage were measured at room temperature. The dark current of the photodetector is 1.03 nA under 5 V bias, and i...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nature Nanotechnology
سال: 2012
ISSN: 1748-3387,1748-3395
DOI: 10.1038/nnano.2012.187