A new low-temperature high-aspect-ratio MEMS process using plasma activated wafer bonding
نویسندگان
چکیده
منابع مشابه
A new low-temperature high-aspect-ratio MEMS process using plasma activated wafer bonding
This paper presents the development and characterization of a new high-aspect-ratio MEMS process. The silicon-on-silicon (SOS) process utilizes dielectric barrier discharge surface activated low-temperature wafer bonding and deep reactive ion etching to achieve a high aspect ratio (feature width reduction-to-depth ratio of 1:31), while allowing for the fabrication of devices with a very high an...
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ژورنال
عنوان ژورنال: Journal of Micromechanics and Microengineering
سال: 2011
ISSN: 0960-1317,1361-6439
DOI: 10.1088/0960-1317/21/4/045020