A non-defect precursor gate oxide breakdown model

Understanding defect creation is central to efforts comprehend gate dielectric breakdown in metal-oxide-semiconductor-field-effect-transistors (MOSFETs). While dielectrics other than SiO2 are now popular, models developed for used these too. Considering that the Si–O bond very strong, modeling have focused ways weaken it so (bond-breaking) commensurate with experimental observations. So far, bond-breaking rely on defect-precursors make energetics manageable. Here, argued success of percolation model oxide precludes role precursors breakdown. It proposed involves “normal” bonds. This new relies fact hole transport form a small polaron—meaning creates transient local distortion as travels. this enables normal bonds be weakened (albeit transiently) enough breaking at rate measurements becomes possible without help externally applied field.