A submicrometer lifted diffused-layer MOSFET
نویسندگان
چکیده
منابع مشابه
Submicrometer inversion-type enhancement-mode InGaAs MOSFET with atomic-layer-deposited Al2O3 as gate dielectric
High-performance inversion-type enhancementmode n-channel In0.53Ga0.47As MOSFETs with atomiclayer-deposited (ALD) Al2O3 as gate dielectric are demonstrated. The ALD process on III–V compound semiconductors enables the formation of high-quality gate oxides and unpinning of Fermi level on compound semiconductors in general. A 0.5-μm gate-length MOSFET with an Al2O3 gate oxide thickness of 8 nm sh...
متن کامل0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode In0.75Ga0.25As MOSFET
We report the experimental demonstration of deepsubmicrometer inversion-mode In0.75Ga0.25As MOSFETs with ALD high-k Al2O3 as gate dielectric. In this letter, n-channel MOSFETs with 100–200-nm-long gates have been fabricated. At a supply voltage of 0.8 V, the fabricated devices with 200–130-nm-long gates exhibit drain currents of 232–440 μA/μm and transconductances of 538–705 μS/μm. The 100-nm d...
متن کاملA Compact Model for an IC Lateral Diffused MOSFET Using the Lumped-Charge Methodology
A compact model for an IC Lateral Diffused MOSFET is developed using the Lumped-Charge Methodology[1]. Model equations and key performance characteristics are documented. They satisfy the requirements of Power MOSFET models[2], unlike the competitive macromodels developed from short-channel, low-power MOSFET models.
متن کاملA Velocity-Overshoot Subthreshold Current Model for Deep-Submicrometer MOSFET Devices
In this paper, a new theoretical approach to submicrometer MOSFET subthreshold current modeling is presented. The diffusion and drift currents are calculated, respectively. The effect of velocity overshoot on subthreshold current is investigated. Comparison with MEDICI simulation results verifies the model.
متن کاملAnalytical Threshold Voltage Computations for 22 nm Silicon-on-Diamond MOSFET Incorporating a Second Oxide Layer
In this paper, for the first time, an analytical equation for threshold voltage computations in silicon-on-diamond MOSFET with an additional insulation layer is presented; In this structure, the first insulating layer is diamond which covered the silicon substrate and second insulating layer is SiO2 which is on the diamond and it is limited to the source and drain on both sides. Analytical solu...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 1987
ISSN: 0741-3106
DOI: 10.1109/edl.1987.26565