A Vertically Stacked Nanosheet Gate-All-Around FET for Biosensing Application

In this paper, a vertically stacked nanosheet gate-all-around field-effect transistor (GAA-NSFET) as label-free biosensor has been proposed and investigated. The influences of different biomolecules on the biosensor’s electrical properties are analyzed, exhibits good sensitivity for both neutral charged biomolecules. Furthermore, deep analysis is performed to evaluate sensing ability biosensors with channel structures. variation analyzed in terms subthreshold swing ( $SS $ ), threshold voltage notation="LaTeX">$V_{\text {th}}$ current switching ratio notation="LaTeX">$I_{\text {on}} / I_{\text {off}}$ ). results show that GAA-NSFET-based obtains best compared other (including nanowire FET-based biosensor) due its larger width multi-channels. Also, filling position various cases biosensor. Its depends amounts instead position. Finally, status map presented, which plots some important works biosensing application along biosensor, more sensitive those {on}}/I_{\text sensitivity.