Active Gate Drive With Gate–Drain Discharge Compensation for Voltage Balancing in Series-Connected SiC MOSFETs
نویسندگان
چکیده
Imbalanced voltage sharing during the turn-off transient is a challenge for series-connected silicon carbide (SiC) MOSFET application. This article first discusses influence of gate-drain discharge deviation on imbalance ratio, and its primary causes are also presented verified by LTspice simulation. Accordingly, novel active gate drive, which aims to compensate difference between devices connected in series, proposed analyzed. By only using original output driving IC, drive realized implementing an auxiliary circuit existing commercial drive. Therefore, unlike other drives balancing control, no extra isolations power/signal needed, number series unlimited. The includes three subcircuits as high-bandwidth current sink regulating switching performance, relative low-frequency but reliable sampling control closed-loop trigger combining former latter. operational principle design guideline each part detail. Experimental results validate performance algorithm.
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ژورنال
عنوان ژورنال: IEEE Transactions on Power Electronics
سال: 2021
ISSN: ['1941-0107', '0885-8993']
DOI: https://doi.org/10.1109/tpel.2020.3024604