AlGaAs/GaAs asymmetric?waveguide, short cavity laser diode design with a bulk active layer near the <i>p</i> ?cladding for high pulsed power emission

It is shown theoretically that a GaAs/AlGaAs laser diode design using an asymmetric waveguide structure and bulk active layer (AL), located close to the p-cladding, can provide high output power in single, broad transverse mode for short-wavelength (<0.9 ?m, matching spectral range of efficiency silicon photodetectors) pulsed emission nanosecond pulse duration region, typically <<100 ns. The dependences performance on thickness AL cavity length are analysed. relatively thick allows short lengths (<1 mm), achieving while maintaining low series resistance narrow far field.