AlGaN/GaN HEMT With 300-GHz $f_{\max}$
نویسندگان
چکیده
منابع مشابه
Integrated Circuits Based on 300 GHz fT Metamorphic HEMT Technology for Millimeter-Wave and Mixed-Signal Applications
Advanced circuits based on metamorphic HEMT (MHEMT) technologies on 4” GaAs substrates for both millimeter-wave, and mixedsignal applications are presented. Extrinsic cut-off frequencies of ft = 293 GHz and fmax = 337 GHz were achieved for a 70 nm gate length metamorphic HEMT technology. The MMIC process obtains high yield on transistor and circuit level. Single-stage low-noise amplifiers demon...
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2010
ISSN: 0741-3106,1558-0563
DOI: 10.1109/led.2009.2038935