AN IMPROVED METHODOLOGY FOR SWITCHING LOSSES ESTIMATION IN SiC MOSFETs

An Improved Algorithmic Method for Software Development Effort Estimation

Accurate estimating is one of the most important activities in the field of software project management. Different aspects of software projects must be estimated among which time and effort are of significant importance to efficient project planning. Due to complexity of software projects and lack of information at the early stages of project, reliable effort estimation is a challenging issue. ...

An Improved Algorithmic Method for Software Development Effort Estimation

Accurate estimating is one of the most important activities in the field of software project management. Different aspects of software projects must be estimated among which time and effort are of significant importance to efficient project planning. Due to complexity of software projects and lack of information at the early stages of project, reliable effort estimation is a challenging issue. ...

Thermal instability effects in SiC Power MOSFETs

Silicon carbide (SiC) power MOSFETs are characterised by potentially thermally unstable behaviour over a broad range of bias conditions. In the past, such behaviour has been shown for silicon (Si) MOSFETs to be related to a reduction of Safe Operating Area at higher drain–source bias voltages. For SiC MOSFETs no characterisation exists yet. This paper presents a thorough experimental investigat...

Technology for Controlling Trench Shape in SiC Power MOSFETs

As the worldwide consumption of energy is increases and the global environment steadily deteriorates, society must find more efficient ways to utilize energy in order to achieve sustainable advances. Accordingly, the field of power electronics is of vital importance, and huge advances in power semiconductor devices are anticipated. Power semiconductor devices that use silicon (Si) are said to b...

Positive bias temperature instability of SiC-MOSFETs induced by gate-switching operation