An integrated modelling and parameter design method for the RC snubber in novel cascode GaN‐based bridge convertors
نویسندگان
چکیده
The utilization of novel cascode GaN devices can significantly increase the power density and efficiency convertors. However, owing to high switching speed (high dv/dt or di/dt) inevitable parasitic inductance in device packages external circuits, are more prone oscillate, resulting voltage overshoot, electromagnetic interference (EMI), even breakdown, which reduces reliability drive system. Therefore, effective suppression oscillation becomes highly critical. This paper presents an integrated modelling a parameter design method for GaN-based bridge Firstly, high-frequency equivalent circuit model is derived Secondly, quantitative RC snubber established based on root locus analysis, makes up defects previous trial-and-error empirical method. Then impacts loss EMI also studied, with optimal resistance capacitance obtained by minimizing loss. Finally, effect verified simulation experiment, results show good agreement theoretical analysis.
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ژورنال
عنوان ژورنال: Iet Power Electronics
سال: 2022
ISSN: ['1755-4535', '1755-4543']
DOI: https://doi.org/10.1049/pel2.12315