An introduction to deep submicron CMOS for vertex applications
نویسندگان
چکیده
منابع مشابه
Gate Engineering for Deep-Submicron CMOS Transistors
Gate depletion and boron penetration through thin gate oxide place directly opposing requirements on the gate engineering for advanced MOSFET’s. In this paper, several important issues of deep-submicron CMOS transistor gate engineering are discussed. First, the impact of gate nitrogen implantation on the performance and reliability of deep-submicron CMOSFET’s is investigated. The suppression of...
متن کاملRandom Process Variation in Deep-Submicron CMOS
One of the most notable features of nanometer scale CMOS technology is the increasing magnitude of variability of the key parameters affecting performance of integrated circuits [1]. Although scaling made controlling extrinsic variability more complex, nonetheless, the most profound reason for the future increase in parameter variability is that the technology is approaching the regime of funda...
متن کاملLeakage Current in Deep-Submicron CMOS Circuits
The high leakage current in deep submicron regimes is becoming a significant contributor to the power dissipation of CMOS circuits as the threshold voltage, channel length, and gate oxide thickness are reduced. Consequently, the identification and modeling of different leakage components is very important for the estimation and reduction of leakage power, especially in the low power application...
متن کاملRandom Process Variation in Deep-Submicron CMOS
One of the most notable features of nanometer scale CMOS technology is the increasing magnitude of variability of the key parameters affecting performance of integrated circuits [1]. Although scaling made controlling extrinsic variability more complex, nonetheless, the most profound reason for the future increase in parameter variability is that the technology is approaching the regime of funda...
متن کاملIdentifying defects in deep-submicron CMOS ICs
Given the oft-cited difficulty of testing modern integrated circuits, the fact that CMOS ICs lend themselves to IDDQ testing is a piece of good fortune. But that valuable advantage is threatened by the rush of semiconductor technology to smaller feature sizes and faster, denser circuits, in line with the Semiconductor Industry Association's (SIA) Roadmap--its forecast for the CMOS IC industry. ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
سال: 2001
ISSN: 0168-9002
DOI: 10.1016/s0168-9002(01)01135-4