An X-Band State Adjustable Low Noise Amplifier Using Current Reuse Technique

This article presents an on-chip state-adjustable 8 GHz~12 GHz low-noise amplifier (LNA). It has two characteristics. First, improved current reuse topology is proposed. By connecting a small capacitor in parallel with the drain of first-stage transistor, bandwidth expanded and in-band flatness improved. Second, innovative adaptive bias circuit designed to cope influence temperature process on performance amplifier, design method for adjustment chip state proposed first time. As result these technologies, area 1.1 mm × 0.8 mm, provides 24.4 dB nominal gain merely 0.75 noise at 10 GHz, yields 14.5 dBm output power 1 compression point (OP1dB) when biased 30 mA quiescent current, meanwhile, gain, OP1dB, can be adjusted on-chip. improves comprehensive X-band LNA more flexibility system engineers application. The fabricated using Win Semiconductors’ 0.15 um InGaAs pHEMT E-mode process.