Analysis of a 5.5-V Class-D Stage Used in $+$30-dBm Outphasing RF PAs in 130- and 65-nm CMOS
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Analysis of a 5.5-V Class-D Stage Used in +30-dBm Outphasing RF PAs in 130- and 65-nm CMOS
This paper presents the design and analysis of a 5.5 V Class-D stage used in two fully integrated watt-level, +32.0 dBm and +29.7 dBm, outphasing RF Power Amplifiers (PA) in standard 130 nm and 65 nm CMOS technologies. The Class-D stage utilizes a cascode configuration, driven by an AC-coupled low-voltage driver, to allow a 5.5 V supply in the 1.2/2.5 V technologies without excessive device vol...
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ژورنال
عنوان ژورنال: IEEE Transactions on Circuits and Systems II: Express Briefs
سال: 2012
ISSN: 1549-7747,1558-3791
DOI: 10.1109/tcsii.2012.2228391