Analysis of Current Capability of SiC Power MOSFETs Under Avalanche Conditions
نویسندگان
چکیده
The phenomenon of reduced energy capability power metal-oxide-semiconductor field-effect transistors (MOSFETs) at high avalanche currents is investigated in commercial 1.2-kV 4H-SiC MOSFETs. Unclamped inductive switching (UIS) measurements as well electrical transport simulations are used to identify the current paths and maximum currents, providing insight into design limits. devices show a for above 52 A due latching parasitic bipolar junction transistor (BJT). BJT also limits switchable ?102 A. Based on simulations, procedure utilizing UIS identification presented.
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2021
ISSN: ['0018-9383', '1557-9646']
DOI: https://doi.org/10.1109/ted.2021.3097310