Analysis of static behavior of ion sensitive field effect Transistor for pH measurements
نویسندگان
چکیده
The Ion-Sensitive Field-Effect Transistor (ISFET) is one of the most popular pH sensors traditionally using to measure hydrogen ion concentration (pH) electrolytic solutions. It developed from Metal Oxide Semiconductor (MOSFET) by replacing gate electrode with an solution be tested, and a reference metal immersed in that solution. Basic principle ISFET operation based on standard NMOS structure conjunction insulator-electrolyte capacitor as described this paper. site-binding theory (generalized two kinds binding sites), together Gouy-Chapman-Stern model for potential profile electrolyte, coupled MOS physics. As result, approximate analytical which completely describes static behavior obtained. description can serve useful tool understanding many contemporary biosensors original has broad application bio-medicine, biological, chemistry environmental areas.
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ژورنال
عنوان ژورنال: Bulletin of Natural Sciences Research
سال: 2022
ISSN: ['2738-1013', '2738-0971']
DOI: https://doi.org/10.5937/bnsr12-37850