Analytic modeling of a hybrid power module based on diamond and SiC devices
نویسندگان
چکیده
Unlike SiC unipolar devices, the on-state resistance of diamond devices based on bulk conduction has a negative temperature coefficient (NTC) which reduces losses at high junction temperatures. Thus, in order to associate these opposed coefficients, current article focuses modeling hybrid power device composed n-type 4H-SiC MOSFET and p-type FET device. The optimal performances sizing are introduced calculated, as an initial benchmark under same specifications. Based analytical both switching losses, temperatures associated heatsink parameters, evaluated for synchronous buck converter operating 1200 V–1 A ambient 300 K. results described manuscript highlight equilibrium total over large range well reduction by two active area. proposed analysis could be further extended different voltage/current classes meet requirements alternative applications.
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ژورنال
عنوان ژورنال: Diamond and Related Materials
سال: 2022
ISSN: ['1879-0062', '0925-9635']
DOI: https://doi.org/10.1016/j.diamond.2022.108936