Anisotropic optical response of GaN and AlN nanowires
                    
                        
                            نویسندگان
                            
                            
                        
                        
                    
                    
                    چکیده
منابع مشابه
Anisotropic optical response of GaN and AlN nanowires.
We present a theoretical study of the electronic structure and optical properties of free-standing GaN and AlN nanowires. We have implemented the empirical tight-binding method, with an orbital basis sp(3), that includes the spin-orbit interaction. The passivation of the dangling bonds at the free surfaces is also studied, together with the effects on the electronic structure of the nanowire. ...
متن کاملOptical study of GaN nanowires and GaN/AlN microcavities
This work focuses on the optical study of GaN nanowires and AlN microcavities containingGaN quantum dots. The 1-meV linewidth of the neutral donor-bound exciton line in thephotoluminescence spectrum of MBE-grown GaN nanowires evidences that the strain ishomogeneous in the material. These nanowires do not exhibit any excitonic confinement, butthe efficient strain relaxation allow...
متن کاملDual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and N isotopes
on AlN using AlN/GaN/AlN quantum wells and N isotopes Meng Qi, Guowang Li, Vladimir Protasenko, Pei Zhao, Jai Verma, Bo Song, Satyaki Ganguly, Mingda Zhu, Zongyang Hu, Xiaodong Yan, Alexander Mintairov, Huili Grace Xing, and Debdeep Jena Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA Ioffe Physico-Technical Institute, Russian Academy of Sciences, Saint Petersbu...
متن کاملUltrafast Nonlinear Optical Response in GaN/AlN Quantum Dots for Optical Switching Applications at 1.55 μm
Multi-terabit optical time division multiplexing (OTDM) networks require semiconductor all-optical switches and wavelength converters operating at room temperature. These devices should be characterized by AN ultrafast response capable of sustaining high repetition rates with low switching energy and high contrast ratio. These features lead to consider the use of resonant nonlinearities for the...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Physics: Condensed Matter
سال: 2012
ISSN: 0953-8984,1361-648X
DOI: 10.1088/0953-8984/24/29/295301