Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits
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چکیده
منابع مشابه
Analysis of Pocket Double Gate Tunnel Fet for Low Stand by Power Logic Circuits
For low power circuits downscaling of MOSFET has a major issue of scaling of voltage which has ceased after 1V. This paper highlights comparative study and analysis of pocket double gate tunnel FET (DGTFET) with MOSFET for low standby power logic circuits. The leakage current of pocket DGTFET and MOSFET have been studied and the analysis results shows that the pocket DGTFET gives the lower leak...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2016
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2016.2566614