Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
نویسندگان
چکیده
منابع مشابه
Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
Hafnium oxide (HfO2) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO2 ...
متن کاملPlasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma
• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website. • The final author version ...
متن کاملCharacteristics of atomic layer deposition grown HfO2 films after exposure to plasma treatments
Ultra thin HfO2 films were grown by the atomic layer deposition (ALD) technique using tetrakismethylethylaminohafnium (Hf[N(CH)3 (C2H5)]4) and ozone (O3) as the precursors and subsequently exposed to various plasma conditions, i.e., CCP (capacitively coupled plasma) and MMT (modified magnetron typed plasma) in N2 or N2/O2 ambient. The conventional CCP treatment was not effective in removing the...
متن کاملGaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO2 gate dielectric: Fabrication and characterization
In this letter, we have investigated the physical and electrical characteristics of atomic layer deposition of HfO2 on GaAs substrates. X-ray photoelectron spectroscopy XPS analysis revealed no significant reduction of arsenic oxides upon deposition of HfO2 on GaAs using tetrakis dimethyl-amino hafnium Hf NMe2 4 as the metallic precursor. However, XPS confirmed the absence of arsenic oxides at ...
متن کاملIntroduction to (plasma-enhanced) atomic layer deposition
Film growth by the atomic layer deposition (ALD) method relies on alternate pulsing of the precursor gases and vapors into a vacuum chamber and their subsequent chemisorption on the substrate surface (Fig. 1) [1,2]. The different steps in the process are saturative such that ALD film growth is self-limiting yielding one submonolayer of film per deposition cycle. ALD has some unique characterist...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
سال: 2017
ISSN: 0734-2101,1520-8559
DOI: 10.1116/1.4972210