Atomic layer deposition of Sc2O3 for passivating AlGaN/GaN high electron mobility transistor devices
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چکیده
منابع مشابه
Atomic layer deposition of Sc2O3 for passivating AlGaN/GaN high electron mobility transistor devices
mobility transistor devices Xinwei Wang, Omair I. Saadat, Bin Xi, Xiabing Lou, Richard J. Molnar, Tom as Palacios, and Roy G. Gordon Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA School of Engineering and Ap...
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*Correspondence: Muhammad Rizwan Saleem, Center for Energy Systems (CES), USAID Center for Advance Studies, National University of Sciences and Technology (NUST), Sector H-12, Islamabad 44000, Pakistan e-mail: [email protected]; [email protected] We review the significance of optical thin films by Atomic Layer Deposition (ALD) method to fabricate nanophotonic devices and structures. A...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2012
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4770071