Au–Ag binary alloys on n-GaAs substrates and effect of work functions on Schottky barrier height

In this study, I investigated the effect of work function (ϕm) AuxAg1−x (x = 0, 0.22, 0.37, 0.71 and 1) on Au–Ag/n-GaAs Schottky diode (SD) parameters. Ag, Au metals three alloys with different compositions deposited n-GaAs substrates by thermal evaporation method. Surface morphologies samples were an atomic force microscope (AFM). Elemental contact conducted energy dispersive X-ray spectroscopy (EDX). Current–voltage (I–V) capacitance–voltage (C–V) measurements performed at room temperature. SD parameters such as barrier height (Φb0), ideality factor (n), series resistance (Rs), interface state density (Dit) SD’s calculated from obtained I–V C–V data. Experimental results showed that all depend alloy composition. The lowest mean value was found 0.789 ± 0.022 eV for Au/n-GaAs SDs highest determined 0.847 0.008 Au0.71Ag0.29/n-GaAs measurements. Weak dependencies to ϕm existed gap parameter (S) 0.0526. S close Bardeen limit (S 0) indicates Fermi level strongly pinned in SDs. Also, main like reverse bias (ΦbRB), doping (Nd) states via using methods measurement results. determine leakage current mechanism Poole–Frenkel emission (PFE) (SE) models applied