Band Anti-Crossing Modelling on Tailored Ga<sub>1-x</sub>In<sub>x</sub>N <sub>y</sub>As<sub>1-y </sub>Band Gap Energy Based Nitrogen Fraction
نویسندگان
چکیده
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ژورنال
عنوان ژورنال: Universal Journal of Electrical and Electronic Engineering
سال: 2019
ISSN: 2332-3280,2332-3299
DOI: 10.13189/ujeee.2019.061612