Bias-driven conductance switching in encapsulated graphene nanogaps

Feedback-controlled electric breakdown of graphene in air or vacuum is a well-established way fabricating tunnel junctions, nanogaps, and quantum dots. We show that the method equally applicable to encapsulated constrictions fabricated using hydrogen silsesquioxane. The silica-like layer left by silsesquioxane resist after electron-beam exposure remains intact graphene. explore conductance switching behavior common nanostructures via feedback-controlled breakdown, it can be attributed atomic-scale fluctuations below encapsulating layer. Our findings open up new ways room-temperature single-electron nanodevices shed light on underlying physical mechanism these nanodevices.