Bias temperature instability and condition monitoring in SiC power MOSFETs

Threshold-voltage bias-temperature instability in commercially-available SiC MOSFETs

Thermal instability effects in SiC Power MOSFETs

Silicon carbide (SiC) power MOSFETs are characterised by potentially thermally unstable behaviour over a broad range of bias conditions. In the past, such behaviour has been shown for silicon (Si) MOSFETs to be related to a reduction of Safe Operating Area at higher drain–source bias voltages. For SiC MOSFETs no characterisation exists yet. This paper presents a thorough experimental investigat...

Temperature Sensitive Electrical Parameters for Condition Monitoring in SiC Power MOSFETs

This paper presents an analysis of the turn ON transient for SiC power MOSFETs and defines a Temperature Sensitive Electrical Parameter (TSEP) which is suitable for condition monitoring. The drain current switching rate dIDS/dt and its temperature dependency have been measured and analysed for commercially available 1.2 kV/10 A, 1.2 kV/24 A and 1.2 kV/42 A SiC MOSFETs from Wolfspeed showing tha...

Positive bias temperature instability of SiC-MOSFETs induced by gate-switching operation

Threshold voltage instabilities of present SiC-power MOSFETs under positive bias temperature stress

We study the threshold voltage (Vth) instability of commercially available silicon carbide (SiC) power MOSFETs or prototypes from four different manufacturers under positive bias temperature stress (PBTS). A positive bias near Vth causes a threshold voltage shift of 0.7 mV per decade in time per nanometer oxide thickness in the temperature range between -50°C and 150°C. Recovery at +5 V after a...