Boron-oxygen defect imaging in p-type Czochralski silicon

Boron-oxygen defect imaging in p-type Czochralski silicon

Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon

Czochralski silicon D. Macdonald, F. Rougieux, A. Cuevas, B. Lim, J. Schmidt, M. Di Sabatino, and L. J. Geerligs Department of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra ACT 0200, Australia Institut für Solarenergieforschung Hameln (ISFH), Am Ohrberg 1, D-31860 Emmerthal, Germany SINTEF Materials and Chemistry, A. Getz v. 2B, 7465 Tron...

Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

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Defect Engineering During Czochralski Crystal Growth and Silicon Wafer Manufacturing

Single crystal silicon has played the fundamental role in electronic industry since the second half of the 20th century and still remains the most widely used material. Electronic devices and integrated circuits are fabricated on single-crystal silicon wafers which are produced from silicon crystals grown primarily by the Czochralski (CZ) technique. Various defects are formed in the growing cry...

Generation and annihilation of boron–oxygen-related recombination centers in compensated p- and n-type silicon

The impact of boron–oxygen-related recombination centers as well as their defect kinetics have been intensely studied in boron-doped oxygen-rich p-type crystalline silicon. Experimental data for the defect in simultaneously boronand phosphorus-doped compensated pand n-type silicon, however, is sparse. In this study, we present time-resolved carrier lifetime measurements on Czochralski-grown sil...