Buffer-Induced Current Collapse in GaN HEMTs on Highly Resistive Si Substrates
نویسندگان
چکیده
منابع مشابه
High Performance GaN HEMTs on 3-inch SI-SiC Substrates
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for pow...
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2018
ISSN: 0741-3106,1558-0563
DOI: 10.1109/led.2018.2864562