Buffer layer-assisted growth of Ge nanoclusters on Si
نویسندگان
چکیده
منابع مشابه
Buffer layer-assisted growth of Ge nanoclusters on Si
In the buffer layer-assisted growth method, a condensed inert gas layer of xenon, with low-surface free energy, is used as a buffer to prevent direct interactions of deposited atoms with substrates. Because of an unusually wide applicability, the buffer layer-assisted growth method has provided a unique avenue for creation of nanostructures that are otherwise impossible to grow, and thus offere...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2006
ISSN: 1931-7573,1556-276X
DOI: 10.1007/s11671-006-9011-y