Carrier Injection to In0.4Ga0.6As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures

Stacking growth of the InGaAs quantum dots (QDs) on top a carrier injection layer is very useful strategy to develop QD devices. This research aims study effect in hybrid structures with In0.4Ga0.6As surface (SQDs), coupled an either one buried QDs (BQDs) or In0.15Ga0.85As well (QW), both through 10 nm GaAs thin spacer. Spectroscopic measurements show that capture and emission efficiency for SQDs BQD structure better than QW injection, due strong physical electrical coupling between two layers. In case although most carriers can be collected into QW, they then tunnel wetting are subsequently lost states via non-radiative recombination. Therefore, as source may not work BQDs stacking structures.