Channel Length Optimization for Planar LDMOS Field-Effect Transistors for Low-Voltage Power Applications
نویسندگان
چکیده
منابع مشابه
Voltage dependences of parameter drifts in hot carrier degradation for n-channel LDMOS transistors
The reliability characterization in shallow trench isolation (STI) based n-channel lateral diffused metal– oxide–semiconductor (LDMOS) transistor has recently drawn much attention. A thorough investigation of the hot carrier degradation under various gate and drain stress biases are carried out to gain an insight on the bias dependences of the parameter drifts. The findings are supported by bot...
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2020
ISSN: 2168-6734
DOI: 10.1109/jeds.2020.3008388