Channeling in helium ion microscopy: Mapping of crystal orientation

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Channeling in helium ion microscopy: Mapping of crystal orientation

BACKGROUND The unique surface sensitivity and the high resolution that can be achieved with helium ion microscopy make it a competitive technique for modern materials characterization. As in other techniques that make use of a charged particle beam, channeling through the crystal structure of the bulk of the material can occur. RESULTS Here, we demonstrate how this bulk phenomenon affects sec...

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Imaging ultra thin layers with helium ion microscopy: Utilizing the channeling contrast mechanism

BACKGROUND Helium ion microscopy is a new high-performance alternative to classical scanning electron microscopy. It provides superior resolution and high surface sensitivity by using secondary electrons. RESULTS We report on a new contrast mechanism that extends the high surface sensitivity that is usually achieved in secondary electron images, to backscattered helium images. We demonstrate ...

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Towards 3D crystal orientation reconstruction using automated crystal orientation mapping transmission electron microscopy (ACOM-TEM)

To relate the internal structure of a volume (crystallite and phase boundaries) to properties (electrical, magnetic, mechanical, thermal), a full 3D reconstruction in combination with in situ testing is desirable. In situ testing allows the crystallographic changes in a material to be followed by tracking and comparing the individual crystals and phases. Standard transmission electron microscop...

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Scanning reflection ion microscopy in a helium ion microscope

Reflection ion microscopy (RIM) is a technique that uses a low angle of incidence and scattered ions to form an image of the specimen surface. This paper reports on the development of the instrumentation and the analysis of the capabilities and limitations of the scanning RIM in a helium ion microscope (HIM). The reflected ions were detected by their "conversion" to secondary electrons on a pla...

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ژورنال

عنوان ژورنال: Beilstein Journal of Nanotechnology

سال: 2012

ISSN: 2190-4286

DOI: 10.3762/bjnano.3.57