Characteristics of Hafnium Oxide Gate Dielectrics Deposited by Remote Plasma-enhanced Atomic Layer Deposition using Oxygen Plasma
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چکیده
منابع مشابه
Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
Hafnium oxide (HfO2) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO2 ...
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0026-2714/$ see front matter 2010 Elsevier Ltd. A doi:10.1016/j.microrel.2010.01.046 * Corresponding author. Tel.: +886 35712121x5580 E-mail address: [email protected] (F.-H. Ko). We have used a sol–gel spin-coating process to fabricate a new metal–insulator–metal capacitor comprising 10-nm thick binary hafnium–zirconium–oxide (HfxZr1 xO2) film on a flexible polyimide (PI) substrate. The su...
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Film growth by the atomic layer deposition (ALD) method relies on alternate pulsing of the precursor gases and vapors into a vacuum chamber and their subsequent chemisorption on the substrate surface (Fig. 1) [1,2]. The different steps in the process are saturative such that ALD film growth is self-limiting yielding one submonolayer of film per deposition cycle. ALD has some unique characterist...
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ژورنال
عنوان ژورنال: Korean Journal of Materials Research
سال: 2007
ISSN: 1225-0562
DOI: 10.3740/mrsk.2007.17.5.263