Characterization of high‐quality pseudomorphic InGaAs/GaAs quantum wells by luminescence and reflectance techniques
نویسندگان
چکیده
منابع مشابه
Characterization of high-quality pseudomorphic InGaAdGaAs quantum wells by luminescence and reflectance techniques
Reflectance and photoluminescence spectroscopy have been used to study the optical properties of high quality In,Gai -.&/GaAs (0.13(x(0.30) single quantum wells. The results show strong agreement with the theoretical model used taking into account the strain potential. The agreement of the theoretical model, though, deviates from the experimental results for large values of excess strain in the...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1992
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.350793