Comparative Study of Al <sub>2</sub> O <sub>3</sub> and HfO <sub>2</sub> for Surface Passivation of Cu(In,Ga)Se <sub>2</sub> Thin Films: An Innovative Al <sub>2</sub> O <sub>3</sub> /HfO <sub>2</sub> Multistack Design
نویسندگان
چکیده
In Cu(In,Ga)Se2 (CIGS) thin-film solar cells, interface recombination is one of the most important limiting factors with respect to device performance. Herein, metal–insulator–semiconductor samples are used investigate and compare passivation effects Al2O3 HfO2 at CIGS. Capacitance–voltage–frequency measurements allow qualitatively quantitatively assess existence high negative charge density (Q f ≈ −1012 cm−2) low interface-trap (D it 1011 cm−2 eV−1). At rear CIGS these, respectively, induce field-effect chemical passivation. A trade-off highlighted between stronger for lower Al2O3. This motivates usage front cells but raises issue its processing compatibility buffer layer. Therefore, an innovative Al2O3/HfO2 multistack design proposed investigated first time. Effective similarly demonstrated this novel design, suggesting potential decrease in rate increased efficiency. 300 °C annealing N2 environment enable enhance effectiveness by reducing D while surface cleaning may reveal useful alternative methods.
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ژورنال
عنوان ژورنال: Physica Status Solidi A-applications and Materials Science
سال: 2021
ISSN: ['1862-6300', '1862-6319']
DOI: https://doi.org/10.1002/pssa.202100073