Competing Weak Localization and Weak Antilocalization in Ultrathin Topological Insulators

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Competing weak localization and weak antilocalization in ultrathin topological insulators.

We demonstrate evidence of a surface gap opening in topological insulator (TI) thin films of (Bi(0.57)Sb(0.43))(2)Te(3) below six quintuple layers through transport and scanning tunneling spectroscopy measurements. By effective tuning the Fermi level via gate-voltage control, we unveil a striking competition between weak localization and weak antilocalization at low magnetic fields in nonmagnet...

متن کامل

Crossover between Weak Antilocalization and Weak Localization of Bulk States in Ultrathin Bi2Se3 Films

We report transport studies on the 5 nm thick Bi₂Se₃ topological insulator films which are grown via molecular beam epitaxy technique. The angle-resolved photoemission spectroscopy data show that the Fermi level of the system lies in the bulk conduction band above the Dirac point, suggesting important contribution of bulk states to the transport results. In particular, the crossover from weak a...

متن کامل

Competition between weak localization and antilocalization in topological surface states.

A magnetoconductivity formula is presented for the surface states of a magnetically doped topological insulator. It reveals a competing effect of weak localization and weak antilocalization in quantum transport when an energy gap is opened at the Dirac point by magnetic doping. It is found that, while random magnetic scattering always drives the system from the symplectic to the unitary class, ...

متن کامل

Crossover between weak antilocalization and weak localization in a magnetically doped topological insulator.

We report transport studies on magnetically doped Bi(2)Se(3) topological insulator ultrathin films grown by molecular beam epitaxy. The magnetotransport behavior exhibits a systematic crossover between weak antilocalization and weak localization with the change of magnetic impurity concentration, temperature, and magnetic field. We show that the localization property is closely related to the m...

متن کامل

Disordered weak and strong topological insulators.

A global phase diagram of disordered weak and strong topological insulators is established numerically. As expected, the location of the phase boundaries is renormalized by disorder, a feature recognized in the study of the so-called topological Anderson insulator. Here, we report unexpected quantization, i.e., robustness against disorder of the conductance peaks on these phase boundaries. Anot...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Nano Letters

سال: 2012

ISSN: 1530-6984,1530-6992

DOI: 10.1021/nl303424n