Computational study of transition metal dichalcogenide cold source MOSFETs with sub-60 mV per decade and negative differential resistance effect
نویسندگان
چکیده
Abstract To extend the Moore’s law in 5 nm node, a large number of two dimensional (2D) materials and devices have been researched, among which ‘cold’ metals 2H MS 2 (M = Nb, Ta) with unique band structures are expected to achieve sub-60 mVdec ?1 subthreshold swing (SS). We explored electronic properties ballistic quantum transport performance corresponding MOSFETs idealized structures. The studied metal field-effect transistors (CM-FETs) based on capable fulfill high-performance (HP) low-dissipation (LP) goals simultaneously, as required by International Technology Roadmap for Semiconductors (ITRS). Moreover, gaps CM-FETs also demonstrate negative differential resistance (NDR) property, allowing us further use CM-FETs. Owing wide transmission path broken gap structure NbS /MoS heterojunction, 4110 ?A?m peak current, several orders magnitude higher than typical tunneling diode, is achieved CM-FET. largest peak-valley ratio (PVR) 1.1×10 6 obtained TaS CM-FET V GS at room temperature. Our results claim that superior on-state SS, cut-off frequency NDR effect can be simultaneously. study provides practicable solution state-of-the-art logic device sub node both more Moore roadmap applications.
منابع مشابه
Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer
There is a rising interest in employing the negative capacitance (NC) effect to achieve sub-60 mV/ decade (below the thermal limit) switching in field-effect transistors (FETs). The NC effect, which is an effectual amplification of the applied gate potential, is realized by incorporating a ferroelectric material in series with a dielectric in the gate stack of a FET. One of the leading challeng...
متن کاملSustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors.
It has been shown that a ferroelectric material integrated into the gate stack of a transistor can create an effective negative capacitance (NC) that allows the device to overcome "Boltzmann tyranny". While this switching below the thermal limit has been observed with Si-based NC field-effect transistors (NC-FETs), the adaptation to 2D materials would enable a device that is scalable in operati...
متن کاملComputational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors
Among various 2D materials, monolayer transition-metal dichalcogenide (mTMD) semiconductors with intrinsic band gaps (1–2 eV) are considered promising candidates for channel materials in next-generation transistors. Low-resistance metal contacts to mTMDs are crucial because currently they limit mTMD device performances. Hence, a comprehensive understanding of the atomistic nature of metal conta...
متن کاملA novel lightly doped drain and source Carbon nanotube field effect transistor (CNTFET) with negative differential resistance
In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...
متن کاملA novel lightly doped drain and source Carbon nanotube field effect transistor (CNTFET) with negative differential resistance
In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: npj 2D materials and applications
سال: 2022
ISSN: ['2397-7132']
DOI: https://doi.org/10.1038/s41699-022-00332-6