Computational study of transition metal dichalcogenide cold source MOSFETs with sub-60 mV per decade and negative differential resistance effect

Abstract To extend the Moore’s law in 5 nm node, a large number of two dimensional (2D) materials and devices have been researched, among which ‘cold’ metals 2H MS 2 (M = Nb, Ta) with unique band structures are expected to achieve sub-60 mVdec ?1 subthreshold swing (SS). We explored electronic properties ballistic quantum transport performance corresponding MOSFETs idealized structures. The studied metal field-effect transistors (CM-FETs) based on capable fulfill high-performance (HP) low-dissipation (LP) goals simultaneously, as required by International Technology Roadmap for Semiconductors (ITRS). Moreover, gaps CM-FETs also demonstrate negative differential resistance (NDR) property, allowing us further use CM-FETs. Owing wide transmission path broken gap structure NbS /MoS heterojunction, 4110 ?A?m peak current, several orders magnitude higher than typical tunneling diode, is achieved CM-FET. largest peak-valley ratio (PVR) 1.1×10 6 obtained TaS CM-FET V GS at room temperature. Our results claim that superior on-state SS, cut-off frequency NDR effect can be simultaneously. study provides practicable solution state-of-the-art logic device sub node both more Moore roadmap applications.