Coulomb barrier to tunneling between parallel two-dimensional electron systems
نویسندگان
چکیده
منابع مشابه
Tunneling between parallel two-dimensional electron gases.
The tunneling between two parallel two-dimensional electron gases has been investigated as a function of temperature T , carrier density n, and the applied perpendicular magnetic field B. In zero magnetic field the equilibrium resonant lineshape is Lorentzian, reflecting the Lorentzian form of the spectral functions within each layer. From the width of the tunneling resonance the lifetime of th...
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Resonant tunneling (RT) has by now been observed in a wide variety of semiconductor systems.’ The commonest configuration, the so-called double-barrier structure, typically consists of a single GaAs quantum well sandwiched between two AlGaAs barriers. Above and below the barriers are heavily doped GaAs regions serving as source and drain, Application of a dc bias voltage can induce RT via the e...
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We derive and evaluate expressions for the low temperature dc equilibrium tunneling conductance between parallel two-dimensional electron systems. Our theory is based on a linear-response formalism and on impurity-averaged perturbation theory. The disorder broadening of features in the dependence of tunneling conductance on sheet densities and in-plane magnetic field strengths is influenced bot...
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We derive and evaluate expressions for the dc tunneling conductance between interacting two-dimensional electron systems at non-zero temperature. The possibility of using the dependence of the tunneling conductance on voltage and temperature to determine the temperature-dependent electronelectron scattering rate at the Fermi energy is discussed. The finite electronic lifetime produced by electr...
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 1992
ISSN: 0031-9007
DOI: 10.1103/physrevlett.69.3804