Datta-and-Das spin transistor controlled by a high-frequency electromagnetic field
نویسندگان
چکیده
منابع مشابه
Nonballistic spin-field-effect transistor.
We propose a spin-field-effect transistor based on spin-orbit coupling of both the Rashba and the Dresselhaus types. Different from earlier proposals, spin transport through our device is tolerant against spin-independent scattering processes. Hence the requirement of strictly ballistic transport can be relaxed. This follows from a unique interplay between the Dresselhaus and the Rashba couplin...
متن کاملHigh Frequency Electromagnetic Field Induces Lipocalin 2 Expression in Mouse Liver
Objective(s) Neutrophil gelatinase-associated lipocalin (NGAL/Lcn2), comprise a group of small extracellular proteins with a common P-sheet-dominated 3-dimensional structure. In the past, it was assumed that the predominant role of lipocalin was acting as transport proteins. Recently it has been found that oxidative stress induces Lcn2 expression. It has been also proved that electromagnetic f...
متن کاملAntiferromagnetic Spin Wave Field-Effect Transistor
In a collinear antiferromagnet with easy-axis anisotropy, symmetry dictates that the spin wave modes must be doubly degenerate. Theses two modes, distinguished by their opposite polarization and available only in antiferromagnets, give rise to a novel degree of freedom to encode and process information. We show that the spin wave polarization can be manipulated by an electric field induced Dzya...
متن کاملthe effect of high voltage, high frequency pulsed electromagnetic field on slain ovine cortical bone
background: this study is the first research investigating the possible effect of pulsed power signals on the characteristics of cortical bone by comparing the mechanical properties of this type of bone pre and post expose to pulsed power. methods: a positive buck-boost converter was applied to generate adjustable high voltage, high frequency pulses (up to 500 v and 10 khz). the functional beha...
متن کامل4 A spin field effect transistor for low leakage current
In a spin field effect transistor, a magnetic field is inevitably present in the channel because of the ferromagnetic source and drain contacts. This field causes random unwanted spin precession when carriers interact with non-magnetic impurities. The randomized spins lead to a large leakage current when the transistor is in the " off "-state, resulting in significant standby power dissipation....
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2016
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.93.165307