Defects and Functions in Ferroelectric Memory Materials
نویسندگان
چکیده
منابع مشابه
Development of Ferroelectric Materials for Memory Applications
A detailed investigation on the electrical, structural and fatigue characteristics of thin film ferroelectric memory devices fabricated from potassium nitrate-phase I11 (KN03-111) was conducted at Michigan Technological University under a grant from Ramtron Corporation, Colorado Springs, Colorado. This research involved: (1) fabrication and processing of 16x16 (256 bit) capacitor type memory de...
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ژورنال
عنوان ژورنال: Nihon Kessho Gakkaishi
سال: 2004
ISSN: 0369-4585,1884-5576
DOI: 10.5940/jcrsj.46.3