Demonstration of MOCVD-grown BGaN with over 10% boron composition

BGaN is an emerging ultrawide bandgap semiconductor with important applications ranging from power electronics to ultraviolet light emitters. To date, boron composition has been limited <10% in the wurtzite phase. Herein, a 200 nm thick high quality mixed-phase film was grown via horizontal–reactor metalorganic chemical vapor deposition exceeding 10%. The growth performed under low temperature and pressure conditions of 600 °C 75 Torr, respectively, rate 0.29 µm/h. Triethylborane triethylgallium were used as source gases for gallium, respectively. Pure nitrogen gas carrier all reactants. A root mean square roughness value 2.56 determined using atomic force microscopy scan on area 5 × µm 2 . X-ray diffraction (XRD) 2θ–ω scans show nearly lattice-matched BGaN/AlN corresponding ∼10%. mixed zincblende phase confirmed XRD pole figure transmission electron microscopy. Additionally, crystalline (002) wz /(111) ZB planes shown rocking curve 810 arcsec full width at half maximum. precisely measured 15% Rutherford backscattering spectrometry combined nuclear reaction analysis.