Dependence of Short-Channel Effects on Semiconductor Bandgap in Tunnel Field-Effect Transistors
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چکیده
منابع مشابه
Wire-channel and wrap-around-gate metal–oxide–semiconductor field- effect transistors with a significant reduction of short channel effects
Metal–oxide–semiconductor field-effect transistors ~MOSFETs! with a wire-channel and wrap-around-gate ~WW! structure were fabricated using electron beam lithography and reactive ion etching. The smallest devices have a 35 nm channel width, a 50 nm channel thickness, and a 70 nm channel length. Measurements showed that as the channel width of WW MOSFETs decreased from 75 to 35 nm short channel e...
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The field-effect mobility ~FEM! in polythiophene ~PT! polymer field-effect transistors ~PFETs! increases with reduced channel lengths during high driving forces across the source and drain, which is contradictory to the decrease in mobility caused by short-channel effects in amorphous Si thin-film transistors. The longitudinal electric-field ~across source and drain! dependence of the FE mobili...
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چکیده ندارد.
15 صفحه اولComparative Study on Top- and Bottom-Source Vertical-Channel Tunnel Field-Effect Transistors
As an add-on device option for the ultra-low power CMOS technology, the double-gated vertical-channel Tunnel Field-Effect Transistors (TFETs) of different source configurations are comparatively studied from the perspectives of fabrication and current drivability. While the Top-Source design where the source of the device is placed on the top of the fin makes the fabrication and source engineer...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2018
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/1034/1/012003