Design and analysis of asymmetrical low-k source side spacer halo doped nanowire metal oxide semiconductor field effect transistor

Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)

The IGFET or MOSFET is a voltage controlled field effect transistor that differs from a JFET in that it has a “Metal Oxide” Gate electrode which is electrically insulated from the main semiconductor n-channel or p-channel by a very thin layer of insulating material usually silicon dioxide, commonly known as glass. This ultra thin insulated metal gate electrode can be thought of as one plate of ...

Fast 1 kV metal-oxide-semiconductor field-effect transistor switch

Performance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor

In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...

Quantum simulation study of gate-all-around (GAA) silicon nanowire transistor and double gate metal oxide semiconductor field effect transistor (DG MOSFET)

In this paper, electrical characteristics of the double gate metal oxide semiconductor field effect transistor (DG MOSFET) and that of gate all around silicon nanowire transistor (GAA SNWT) have been investigated. We have evaluated the variations of the threshold voltage, the subthreshold slope, draininduced barrier lowering, ON and OFF state currents when channel length decreases. Quantum mech...

GaN Metal-Semiconductor Field-Effect Transistor Project II

In this paper, we will discuss the modeling and simulation result of GaN MESFET device with our conventional computer added device simulator MEDICI. We will find out material parameter of GaN so that the device characteristics of simulation fit to experimentally built-on device characteristics. Then we will vary some important device parameters such as gate length, channel doping rate, and acti...