Design and Switching Characteristics of Flip-Chip GaN Half-Bridge Modules Integrated with Drivers

Half-bridge modules with integrated GaN high electron mobility transistors (HEMTs) and driver dies were designed fabricated in this research. Our design uses flip-chip technology for fabrication, instead of more generally applied wire bonding, to reduce parasitic inductance both the driver-gate drain-source loops. Modules prepared using methods double-pulse test was evaluate compare their switching characteristics. The gate voltage (Vgs) waveform module showed no overshoot during turn-on period, a small oscillation turn-off period. probabilities damage false greatly reduced. loop measured be 3.4 nH. rise fall times drain (Vds) 12.9 5.8 ns, respectively, an only 4.8 V period under Vdc = 100 V. These results indicate that use along integration HEMTs can effectively improve performance half-bridge compared bonding.