Design of Single Ended 8T SRAM Cell using Sub threshold Logic
نویسندگان
چکیده
منابع مشابه
8T Double-Ended Read-Decoupled SRAM Cell
Scaling of SRAM cell beyond 65-nm poses a serious threat to the stability of the cell and is a cause of major concern for the upcoming technologies. Due to random dopant fluctuation (RDF) and other process parameter variations, the cell turns out to be unstable. In this paper, an 8T (8Transistor) SRAM cell is proposed which offers enhanced data stability during read operation. While reading, th...
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ژورنال
عنوان ژورنال: International Journal for Research in Applied Science and Engineering Technology
سال: 2019
ISSN: 2321-9653
DOI: 10.22214/ijraset.2019.5036