Determination of Acceptor Ratio and Iron Concentration in Co-doped Silicon

Formation rates of iron-acceptor pairs in crystalline silicon

The characteristic association time constant describing the formation of iron-acceptor pairs in crystalline silicon has been measured for samples of various p-type dopant concentrations and species B, Ga, and In near room temperature. The results show that the dopant species has no impact on the pairing kinetics, suggesting that the pairing process is entirely limited by iron diffusion. This co...

Minority-Carrier Lifetime Degradation in Silicon Co-Doped with Iron and Gallium

The effect of Fe-Ga pair defects on minority-carrier lifetime τ in high-purity, dislocation-free float-zoned Si is presented, and their properties are documented by deeplevel transient spectroscopy and annealing studies. The typical τ of Fe-Ga co-doped crystals (0.4 μs) was dramatically lower than τ of crystals doped with similar amounts of either Fe alone (12 μs) or Ga alone (1,400 μs), contra...

Determination of acceptor concentration in GaN from photoluminescence

application and construction of carbon paste modified electrodes developed for determination of metal ions in some real samples

ساخت الکترودهاِی اصلاح شده ِیکِی از چالشهاِی همِیشگِی در دانش شیمِی بوِیژه شیمِی تجزیه مِی باشد ،که با در نظر گرفتن سادگِی ساخت، کاربردی بودن و ارزان بودن روش مِی توان به باارزش بودن چنِین سنسورهاِی پِی برد.آنچه که در ادامه آورده شده به ساخت و کاربرد الکترودهاِی اصلاح شده با استفاده از نانو ذرات در اندازه گِیرِی ولتامترِی آهن وکادمِیم اشاره دارد. کار اول اختصاص دارد به ساخت الکترود خمِیر کربن اصلاح شده با لِیگاند داِ...

architecture and engineering of nanoscale sculptured thin films and determination of their properties

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